2N6790

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Case Connection :

DRAIN

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

JESD-30 Code :

O-MBCY-W3

DS Breakdown Voltage-Min :

200V

Terminal Position :

BOTTOM

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Packaging :

Bulk

Terminal Form :

Wire

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

14A

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Rds On (Max) @ Id, Vgs :

800m Ω @ 2.25A, 10V

Package / Case :

TO-205AF Metal Can

Number of Elements :

1

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Power Dissipation-Max :

800mW Tc

Continuous Drain Current (ID) :

3.5A

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.85Ohm