2N6786

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Series :

-

FET Type :

N-Channel

FET Feature :

-

Rds On (Max) @ Id, Vgs :

3.7Ohm @ 1.25A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

170 pF @ 25 V

Product Status :

Active

Package :

Bulk

Power Dissipation (Max) :

15W (Tc)

Package / Case :

TO-205AF Metal Can

Supplier Device Package :

TO-205AF (TO-39)

Current - Continuous Drain (Id) @ 25°C :

1.25A (Tc)

Drain to Source Voltage (Vdss) :

400 V

Mounting Type :

Through Hole