2N6784

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200V

Terminal Position :

BOTTOM

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Mounting Type :

Through Hole

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 0V

RoHS Status :

Non-RoHS Compliant

Mount :

Through Hole

Package / Case :

TO-205AF Metal Can

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Terminal Form :

Wire

Published :

1997

JESD-30 Code :

O-MBCY-W3

Continuous Drain Current (ID) :

2.25A

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.25A Tc

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

800mW Ta 15W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

200V

FET Type :

N-Channel

Drain-source On Resistance-Max :

2.81Ohm

Number of Terminations :

3