2N6784

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Terminal Form :

Wire

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

O-MBCY-W3

Number of Elements :

1

Package / Case :

TO-205AF Metal Can

Power Dissipation-Max :

800mW Ta 15W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

8.6nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 1.5A, 0V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

200V

Mount :

Through Hole

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

2.25A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

2.25A

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

2.81Ohm

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON