2N6782

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Pbfree Code :

No

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.25A, 10V

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2015

Power Dissipation-Max :

800mW Ta 15W Tc

Terminal Position :

BOTTOM

Mount :

Through Hole

Package / Case :

TO-205AF Metal Can

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

TIN LEAD

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.61Ohm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3

Packaging :

Bulk

Continuous Drain Current (ID) :

3.5A

Terminal Form :

Wire

Configuration :

SINGLE WITH BUILT-IN DIODE