2N6782

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

RoHS Status :

Non-RoHS Compliant

DS Breakdown Voltage-Min :

100V

Pbfree Code :

No

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e0

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Published :

2015

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Continuous Drain Current (ID) :

3.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Terminal Form :

Wire

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.25A, 10V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

3.5A Tc

Package / Case :

TO-205AF Metal Can

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Terminal Position :

BOTTOM

Power Dissipation-Max :

800mW Ta 15W Tc

Case Connection :

DRAIN

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.61Ohm

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED