2N6770T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Power Dissipation-Max :

4W Ta 150W Tc

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Terminal Position :

Single

Continuous Drain Current (ID) :

12A

Terminal Form :

PIN/PEG

Case Connection :

Isolated

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

JESD-30 Code :

S-XSFM-P3

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.5Ohm

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

Packaging :

Bulk

Operating Mode :

ENHANCEMENT MODE