2N6766T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Mounting Type :

Through Hole

Pin Count :

3

DS Breakdown Voltage-Min :

200V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Terminal Form :

PIN/PEG

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Continuous Drain Current (ID) :

30A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

200V

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Package / Case :

TO-254-3, TO-254AA (Straight Leads)

ECCN Code :

EAR99

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Power Dissipation-Max :

4W Ta 150W Tc

RoHS Status :

Non-RoHS Compliant

Drain-source On Resistance-Max :

0.065Ohm

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V