2N6766

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-204AE

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Power Dissipation-Max :

4W Ta 150W Tc

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.065Ohm

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Pin Count :

2

Terminal Form :

PIN/PEG

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

TIN LEAD OVER NICKEL

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

O-MBFM-P2

Published :

1997

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Pins :

3

Mount :

Through Hole

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

200V

Drain to Source Voltage (Vdss) :

200V

Continuous Drain Current (ID) :

30A

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

90m Ω @ 30A, 10V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

190ns

Qualification Status :

Not Qualified

FET Type :

N-Channel