2N6764T1

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Terminal Form :

PIN/PEG

Number of Terminations :

3

Case Connection :

Isolated

Number of Elements :

1

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.065Ohm

Rds On (Max) @ Id, Vgs :

65m Ω @ 38A, 10V

FET Type :

N-Channel

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Power Dissipation-Max :

4W Ta 150W Tc

JESD-30 Code :

S-XSFM-P3

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

38A

Gate Charge (Qg) (Max) @ Vgs :

125nC @ 10V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

100V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

JEDEC-95 Code :

TO-254AA

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-204AE

Terminal Position :

Single