2N6760TXV

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

1 Ω

RoHS :

Non-Compliant

Supplier Device Package :

TO-3

Reference Standard :

MILITARY STANDARD (USA)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

O-MBFM-P2

Qualification Status :

COMMERCIAL

Drain to Source Voltage (Vdss) :

400 V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

5.5A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

800 pF @ 25 V

Mounting Type :

Through Hole

Terminal Form :

PIN/PEG

Vgs(th) (Max) @ Id :

4V @ 1mA

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation (Max) :

75W (Tc)

Product Status :

Active

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

8 A

Terminal Position :

BOTTOM

Additional Feature :

RADIATION HARDENED

Number of Terminals :

2

Package / Case :

TO-204AA

FET Feature :

-

Manufacturer :

Rochester Electronics LLC

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

DS Breakdown Voltage-Min :

400 V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1Ohm @ 3.5A, 10V

Series :

-

Package Shape :

Round

Reach Compliance Code :

Unknown

Surface Mount :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Bulk

JEDEC-95 Code :

TO-204AA