2N6760

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Vgs (Max) :

±20V

Power Dissipation-Max :

4W Ta 75W Tc

DS Breakdown Voltage-Min :

400V

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 5.5A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Pulsed Drain Current-Max (IDM) :

22A

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Mount :

Through Hole

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

400V

Packaging :

Bulk

Package / Case :

TO-204AA, TO-3

Additional Feature :

High Reliability

Terminal Position :

BOTTOM

Case Connection :

DRAIN

Terminal Form :

PIN/PEG

Number of Terminations :

2

Continuous Drain Current (ID) :

5.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

40ns

JESD-30 Code :

O-MBFM-P2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.29.00.95

Number of Elements :

1

Number of Pins :

3

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

2

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V