2N6760

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.22 Ω @ 5.5A, 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

22A

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Bulk

Package / Case :

TO-204AA, TO-3

Drain to Source Voltage (Vdss) :

400V

FET Type :

N-Channel

Rise Time :

40ns

JESD-30 Code :

O-MBFM-P2

DS Breakdown Voltage-Min :

400V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Number of Elements :

1

Terminal Form :

PIN/PEG

Continuous Drain Current (ID) :

5.5A

Number of Terminations :

2

Terminal Position :

BOTTOM

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Published :

1997

HTS Code :

8541.29.00.95

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pin Count :

2

Power Dissipation-Max :

4W Ta 75W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Number of Pins :

3