2N6758

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Rise Time :

80ns

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Mount :

Through Hole

Terminal Position :

BOTTOM

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-204AA, TO-3

Terminal Form :

PIN/PEG

Published :

1997

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

36A

Number of Terminations :

2

Mounting Type :

Through Hole

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

Packaging :

Bulk

JESD-30 Code :

O-MBFM-P2

Operating Temperature :

-55°C~150°C TJ

Pin Count :

2

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

High Reliability

Rds On (Max) @ Id, Vgs :

490m Ω @ 9A, 10V

Power Dissipation-Max :

4W Ta 75W Tc

Drain-source On Resistance-Max :

0.49Ohm

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

200V

Drain Current-Max (Abs) (ID) :

9A