2N6756

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Rise Time :

80ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Packaging :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Drain-source On Resistance-Max :

0.21Ohm

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

210m Ω @ 14A, 10V

Power Dissipation-Max :

4W Ta 75W Tc

Terminal Form :

PIN/PEG

Case Connection :

DRAIN

Pin Count :

2

Terminal Position :

BOTTOM

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

JESD-30 Code :

O-MBFM-P2

Continuous Drain Current (ID) :

14A

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Number of Elements :

1

Package / Case :

TO-204AA, TO-3

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)