2N6490G
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- Mfr.Part #
- 2N6490G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220
- Stock
- 11,749
- In Stock ：
- 11,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 5 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Height :
- 15.75mm
- Collector Emitter Saturation Voltage :
- 3.5V
- Voltage - Rated DC :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Gain Bandwidth Product :
- 5MHz
- Contact Plating :
- Tin
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-220-3
- Base Part Number :
- 2N6490
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tube
- Max Power Dissipation :
- 1.8W
- Current - Collector Cutoff (Max) :
- 1mA
- Weight :
- 4.535924g
- Power Dissipation :
- 1.8W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Surface Mount :
- No
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 15A
- Length :
- 10.28mm
- Current Rating :
- 15A
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 70V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- hFE Min :
- 20
- Published :
- 2001
- Radiation Hardening :
- No
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Transition Frequency :
- 5MHz
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Frequency :
- 5MHz
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Datasheets
- 2N6490G
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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