2N6490
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- Mfr.Part #
- 2N6490
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Width :
- 4.82mm
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 1.8W
- Polarity/Channel Type :
- PNP
- Packaging :
- Tube
- ECCN Code :
- EAR99
- hFE Min :
- 20
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Base Part Number :
- 2N6490
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 5MHz
- Height :
- 15.75mm
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Length :
- 10.28mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 5MHz
- Weight :
- 4.535924g
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 3.5V
- Current Rating :
- 15A
- Max Collector Current :
- 15A
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 70V
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.8W
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Frequency :
- 5MHz
- Transistor Application :
- SWITCHING
- Datasheets
- 2N6490
2N6490 Documents
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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