2N6490
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- Mfr.Part #
- 2N6490
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.8W
- Collector Emitter Saturation Voltage :
- 3.5V
- JESD-609 Code :
- e3
- Current Rating :
- 15A
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Published :
- 2001
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Gain Bandwidth Product :
- 5MHz
- Length :
- 10.28mm
- Packaging :
- Tube
- Width :
- 4.82mm
- Voltage - Rated DC :
- 60V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 60V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Number of Pins :
- 3
- hFE Min :
- 20
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 70V
- Frequency :
- 5MHz
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Number of Elements :
- 1
- Surface Mount :
- No
- Transition Frequency :
- 5MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 60V
- Max Collector Current :
- 15A
- Operating Temperature :
- -65°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 15.75mm
- Current - Collector Cutoff (Max) :
- 1mA
- Lead Free :
- Lead Free
- Factory Lead Time :
- 5 Weeks
- Base Part Number :
- 2N6490
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.8W
- Datasheets
- 2N6490
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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