2N6490
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- Mfr.Part #
- 2N6490
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 5MHz
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 60V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Length :
- 10.28mm
- hFE Min :
- 20
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Width :
- 4.82mm
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 1.8W
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Transition Frequency :
- 5MHz
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 70V
- Published :
- 2001
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Factory Lead Time :
- 5 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 1mA
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Frequency :
- 5MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Voltage - Rated DC :
- 60V
- Current Rating :
- 15A
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.8W
- Base Part Number :
- 2N6490
- Collector Emitter Saturation Voltage :
- 3.5V
- Weight :
- 4.535924g
- Lead Free :
- Lead Free
- Max Collector Current :
- 15A
- Height :
- 15.75mm
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2N6490
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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