2N6490
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- Mfr.Part #
- 2N6490
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 15A TO220AB
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Factory Lead Time :
- 5 Weeks
- Max Collector Current :
- 15A
- Current - Collector Cutoff (Max) :
- 1mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Base Part Number :
- 2N6490
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Max Power Dissipation :
- 1.8W
- Package / Case :
- TO-220-3
- Published :
- 2001
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 3.5V
- Collector Base Voltage (VCBO) :
- 70V
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 13 hours ago)
- Height :
- 15.75mm
- Case Connection :
- COLLECTOR
- Length :
- 10.28mm
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 1.8W
- Weight :
- 4.535924g
- Gain Bandwidth Product :
- 5MHz
- Current Rating :
- 15A
- Number of Terminations :
- 3
- Transition Frequency :
- 5MHz
- Number of Pins :
- 3
- hFE Min :
- 20
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5A 4V
- Width :
- 4.82mm
- Mounting Type :
- Through Hole
- Frequency :
- 5MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3.5V @ 5A, 15A
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- 2N6490
2N6490 Documents
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
2N6490G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 3.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3.5V @ 5A, 15A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 5MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.
2N6490G Features
the DC current gain for this device is 20 @ 5A 4V
a collector emitter saturation voltage of 3.5V
the vce saturation(Max) is 3.5V @ 5A, 15A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 5MHz
2N6490G Applications
There are a lot of ON Semiconductor
2N6490G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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