2N5172_D26Z
- Mfr.Part #
- 2N5172_D26Z
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 0.5A TO92-3
- Stock
- 41,020
- In Stock :
- 41,020
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-92-3
- Current - Collector (Ic) (Max) :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Power - Max :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2N5172
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- 2N5172_D26Z

NPN -55°C~150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
2N5172_D26Z Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 1mA, 10mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 25V.
2N5172_D26Z Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 250mV @ 1mA, 10mA
the supplier device package of TO-92-3
2N5172_D26Z Applications
There are a lot of ON Semiconductor
2N5172_D26Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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