2N4401NLBU
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- Mfr.Part #
- 2N4401NLBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.6A TO92-3
- Stock
- 1,244
- In Stock ：
- 1,244
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- Weight :
- 178.2mg
- Gain Bandwidth Product :
- 250MHz
- Voltage - Rated DC :
- 40V
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 600mA
- Collector Emitter Saturation Voltage :
- 750mV
- Number of Pins :
- 3
- Packaging :
- Bulk
- Base Part Number :
- 2N4401
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Current Rating :
- 600mA
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 1V
- hFE Min :
- 100
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2N4401NLBU
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NPN -55°C~150°C TJ TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N4401NLBU Overview
In this device, the DC current gain is 100 @ 150mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
2N4401NLBU Features
the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N4401NLBU Applications
There are a lot of ON Semiconductor
2N4401NLBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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