2N4401_D81Z

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Mfr.Part #
2N4401_D81Z
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN 40V 0.6A TO92-3
Stock
3,156
In Stock :
3,156

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
hFE Min :
100
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Frequency :
250MHz
Number of Pins :
3
Emitter Base Voltage (VEBO) :
6V
Radiation Hardening :
No
RoHS Status :
RoHS Compliant
Base Part Number :
2N4401
Packaging :
Tape and Reel (TR)
Voltage - Rated DC :
40V
Collector Base Voltage (VCBO) :
60V
Gain Bandwidth Product :
250MHz
Max Collector Current :
600mA
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Saturation Voltage :
750mV
Collector Emitter Voltage (VCEO) :
40V
Max Power Dissipation :
625mW
Number of Elements :
1
Power Dissipation :
625mW
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA 1V
Transistor Type :
NPN
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
40V
Current Rating :
600mA
Lead Free :
Lead Free
Datasheets
2N4401_D81Z
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N4401_D81Z from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Pins:3, Base Part Number:2N4401, Mounting Type:Through Hole, 2N4401_D81Z pinout, 2N4401_D81Z datasheet PDF, 2N4401_D81Z amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N4401_D81Z ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N4401_D81Z


NPN -55°C~150°C TJ 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

2N4401_D81Z Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 1V.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.When VCE saturation is 750mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.A maximum collector current of 600mA volts can be achieved.

2N4401_D81Z Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA


2N4401_D81Z Applications


There are a lot of ON Semiconductor
2N4401_D81Z applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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