2N3055
- Mfr.Part #
- 2N3055
- Manufacturer
- Microchip Technology
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 70V 15A TO3
- Stock
- 2,445
- In Stock :
- 2,445
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 115W
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 8.51mm
- Collector Emitter Saturation Voltage :
- 3V
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Element Material :
- SILICON
- Pin Count :
- 2
- Lead Free :
- Lead Free
- Max Collector Current :
- 15A
- Weight :
- 4.535924g
- Package / Case :
- TO-204AA, TO-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A 4V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 700µA
- Voltage - Rated DC :
- 60V
- Frequency :
- 2.5MHz
- Number of Pins :
- 2
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current Rating :
- 15A
- hFE Min :
- 20
- Surface Mount :
- No
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- 2N3055
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 115W
- Terminal Form :
- PIN/PEG
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Published :
- 2000
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Junction Temperature (Tj) :
- 200°C
- Gain Bandwidth Product :
- 2.5MHz
- Packaging :
- Tray
- Width :
- 26.67mm
- Transition Frequency :
- 2.5MHz
- Datasheets
- 2N3055

NPN -65°C~200°C TJ 700μA 1 Elements 2 Terminations SILICON NPN TO-204AA, TO-3 Tray Through Hole
Description
The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. The output or driver stages in devices like switching regulators, converters, and power amplifiers are where complementary power transistors are used for general-purpose power amplification and switching. A semiconductor device frequently utilized for amplification is the bipolar transistor. Analog or digital signals can be amplified using the gadget. Additionally, it can switch DC or work as an oscillator. A bipolar transistor physically increases current, but it can also be coupled in circuits intended to increase voltage or power.
Features
-
Excellent Safe Operating Area
-
Pb?Free Packages are Available*
-
DC Current Gain ? hFE = 20?70 @ IC = 4 Adc
-
Collector?Emitter Saturation Voltage ? VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
-
Designed to control high current – voltage rating
Applications
-
Industrial
-
Switch-mode power supplies (SMPS) Relays
-
Converters
-
Power amplifiers
-
Controlling
-
Generating electrical signals
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