23A512T-E/SN
- Mfr.Part #
- 23A512T-E/SN
- Manufacturer
- Microchip Technology
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC SRAM 512KBIT SPI/QUAD 8SOIC
- Stock
- 19,427
- In Stock :
- 19,427
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- Manufacturer :
- Microchip Technology
- Product Category :
- Memory
- Product Status :
- Active
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Operating Mode :
- SYNCHRONOUS
- Length :
- 4.9 mm
- Parallel/Serial :
- Serial
- Memory Width :
- 8
- Base Product Number :
- 23A512
- Peak Reflow Temperature (Cel) :
- 260
- Memory Interface :
- SPI - Quad I/O
- Frequency :
- 20MHz
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Package :
- Tape and Reel (TR)
- Organization :
- 64 k x 8
- Temperature Grade :
- Automotive
- Number of Words :
- 65536 words
- Screening Level :
- TS 16949
- Supply Voltage-Max (Vsup) :
- 2.2 V
- JESD-609 Code :
- e3
- Access Time :
- 32 ns
- Memory IC Type :
- STANDARD SRAM
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- 8-SOIC
- Surface Mount :
- yes
- Mounting Style :
- SMD/SMT
- Reach Compliance Code :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.9 mm
- Manufacturer :
- Microchip Technology Inc
- Supply Voltage-Min (Vsup) :
- 1.7 V
- Minimum Operating Temperature :
- - 40 C
- JESD-30 Code :
- R-PDSO-G8
- Memory Density :
- 524288 bit
- Series :
- --
- Number of Terminals :
- 8
- Terminal Form :
- Gull wing
- Memory Organization :
- 64K x 8
- Interface Type :
- SDI, SPI, SQI
- Operating Temperature :
- -40°C~125°C TA
- Number of Pins :
- 8
- Maximum Operating Temperature :
- + 125 C
- Published :
- 2012
- Seated Height-Max :
- 1.75 mm
- Terminal Pitch :
- 1.27 mm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Write Cycle Time - Word, Page :
- --
- Memory Size :
- 512Kb 64K x 8
- Base Part Number :
- 23A512
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Clock Frequency :
- 16MHz
- Package Shape :
- RECTANGULAR
- Factory Lead Time :
- 19 Weeks
- Voltage - Supply :
- 1.7V~2.2V
- Memory Format :
- SRAM
- Mounting Type :
- Surface Mount
- Datasheets
- 23A512T-E/SN

Memory Microchip Technology 23A512T-E/SN Overview
Bringing together high-speed functionality and cost-effectiveness, the Memory Microchip Technology 23A512T-E/SN is a cutting-edge SRAM component tailored for high-performance applications requiring efficient and fast data buffering. This integrated circuit features a 512Kbit Static Random Access Memory that operates on the versatile SPI/QUAD interface protocols, encapsulated neatly in an 8SOIC package for streamlined surface mounting. Designed and manufactured by the renowned Microchip Technology, this IC prioritizes reliability and data integrity, making it an exemplary choice for designers aiming to boost their system's performance with rapid read/write operations and low-power consumption. Its compact form factor is specifically engineered for applications where space is at a premium, without compromising on storage capacity or speed.
23A512T-E/SN Features
- 512Kbit SPI/QUAD Interface SRAM
- High-speed data transfer capabilities
- Low-power consumption for energy-efficient designs
- 8SOIC package for efficient PCB real estate usage
- Manufactured by the reliable Microchip Technology
- Stable performance under various temperature ranges
23A512T-E/SN Applications
- Automotive Electronics: Utilized for data buffering in navigation systems and driver assistance electronics.
- Industrial Control Systems: Serves as a dependable memory for PLCs and other control unit applications requiring quick access to data.
- Consumer Electronics: Integrates into devices such as digital cameras and gaming consoles where fast memory read/write speeds are essential.
- Telecommunications: Key component in networking equipments, like routers and switches, for managing high-speed data transactions.
- Medical Devices: Provides reliable data storage in numerous medical diagnostic equipment where accurate and fast memory access is vital.
- Internet of Things (IoT) Devices: Acts as a secondary memory source where persistent and swift memory access is necessary for smart devices.
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