23A512-E/ST
- Mfr.Part #
- 23A512-E/ST
- Manufacturer
- Microchip Technology
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- IC SRAM 512KBIT SPI/QUAD 8TSSOP
- Stock
- 21,803
- In Stock :
- 21,803
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- Manufacturer :
- Microchip Technology
- Product Category :
- Memory
- Series :
- --
- JESD-30 Code :
- R-PDSO-G8
- Voltage - Supply :
- 1.7V~2.2V
- Memory Type :
- Volatile
- Reach Compliance Code :
- Compliant
- Operating Mode :
- SYNCHRONOUS
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 20 Weeks
- Mounting Style :
- SMD/SMT
- Memory Width :
- 8
- Terminal Position :
- Dual
- Temperature Grade :
- Automotive
- Length :
- 4.4mm
- RoHS Status :
- ROHS3 Compliant
- Memory Organization :
- 64K x 8
- Base Product Number :
- 23A512
- Screening Level :
- TS 16949
- Product Status :
- Active
- Supplier Device Package :
- 8-TSSOP
- Number of Functions :
- 1
- Subcategory :
- Memory and Data Storage
- Number of Pins :
- 8
- Manufacturer :
- Microchip
- Memory IC Type :
- STANDARD SRAM
- Minimum Operating Temperature :
- - 40 C
- Parallel/Serial :
- Serial
- Write Cycle Time - Word, Page :
- --
- Interface Type :
- SDI, SPI, SQI
- Published :
- 2012
- Memory Density :
- 524288 bit
- Memory Interface :
- SPI - Quad I/O
- Packaging :
- Tube
- Supply Voltage-Max (Vsup) :
- 2.2V
- Seated Height-Max :
- 1.2 mm
- Brand :
- Microchip Technology
- Memory Size :
- 512Kb 64K x 8
- Width :
- 3mm
- Clock Frequency :
- 16MHz
- Terminal Form :
- Gull wing
- Product Category :
- SRAM
- Supply Voltage-Min (Vsup) :
- 1.7V
- Operating Temperature :
- -40°C~85°C TA
- Terminal Pitch :
- 0.65mm
- Number of Terminations :
- 8
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Access Time :
- 32 ns
- Memory Format :
- SRAM
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Package :
- Tube
- Number of Terminals :
- 8
- Type :
- SYNCHRONOUS
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Maximum Operating Temperature :
- + 125 C
- Base Part Number :
- 23A512
- Organization :
- 64 k x 8
- Product Type :
- SRAM
- JESD-609 Code :
- e3
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package Shape :
- RECTANGULAR
- Height Seated (Max) :
- 1.2mm
- Number of Words :
- 65536 words
- Datasheets
- 23A512-E/ST
Memory Microchip Technology 23A512-E/ST Overview
Unlocking the potential of high-performance digital systems, the Memory Microchip Technology 23A512-E/ST stands out as a pivotal component for modern electronic designs. This Integrated Circuit (IC) from Microchip Technology is a 512-Kbit Serial SRAM with SPI (Serial Peripheral Interface) and QUAD interface capabilities, packed efficiently into an 8-TSSOP (Thin Shrink Small Outline Package). Its high-speed data access and low-power consumption make it an excellent choice for applications requiring quick data manipulation and storage without compromising on power efficiency. By integrating this IC into your designs, you're ensuring reliability and scalability, all while maintaining Microchip's commitment to performance that can satisfy the fast-paced demands of contemporary technology.
23A512-E/ST Features
- Capacity: 512 Kbits of serial SRAM storage
- Interface: SPI/QUAD for flexible and fast communication
- Package: 8-TSSOP for a compact footprint
- Low Power Consumption: Ideal for power-sensitive applications
- Manufacturer: Trusted quality and support from Microchip Technology
23A512-E/ST Applications
- Industrial Control Systems: Serves as additional high-speed memory for temporary data logging and inter-processor communication.
- Consumer Electronics: Improves the responsiveness of multimedia devices by offering quick access to buffer memory.
- Automotive Electronics: Provides reliable data storage for advanced driver-assistance systems (ADAS) that require fast data retrieval.
- Internet of Things (IoT) Devices: Enables efficient data caching for seamless user experiences in smart home applications.
- Wearable Technology: Supports the compact size and low power requirements of modern wearable devices with its efficient design.
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