1N5767#T25

Manufacturer :

Broadcom

Product Category :

Diodes - RF

Resistance @ If, F :

2.5Ohm @ 100mA 100MHz

Diode Capacitance-Nom :

0.4pF

ECCN Code :

EAR99

JESD-609 Code :

e0

Additional Feature :

LOW HARMONIC DISTORTION

Power Dissipation-Max :

250mW

Diode Res Test Current :

100mA

Minority Carrier Lifetime-Nom :

1.3 μs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Diode Capacitance-Max :

0.4pF

Surface Mount :

No

Voltage - Peak Reverse (Max) :

100V

HTS Code :

8541.10.00.60

Packaging :

Tape and Reel (TR)

JESD-30 Code :

O-LALF-W2

Base Part Number :

1N5767

Published :

2007

Terminal Form :

Wire

Diode Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Diode Res Test Frequency :

100MHz

Application :

ATTENUATOR; SWITCHING

Number of Terminations :

2

Package / Case :

DO-204AH, DO-35, Axial

Terminal Finish :

TIN LEAD

Capacitance @ Vr, F :

0.4pF @ 50V 1MHz

Diode Type :

PIN - Single

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reverse Test Voltage :

50V

Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

Current - Max :

100mA