1N5420E3
- Mfr.Part #
- 1N5420E3
- Manufacturer
- Microchip Technology
- Package / Case
- Datasheet
- Download
- Description
- STANDARD RECTIFIER
- Stock
- 46,440
- In Stock :
- 46,440
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- Manufacturer :
- Microchip Technology
- Product Category :
- Diodes - Rectifiers - Single
- Maximum DC Reverse Voltage (V) :
- 660
- Technology :
- Avalanche
- Case Connection :
- Isolated
- Diode Type :
- RECTIFIER DIODE
- Peak Reverse Recovery Time (ns) :
- 400
- Pin Count :
- 2
- Maximum Operating Temperature (°C) :
- 175
- Supplier Package :
- Case E
- PCB changed :
- 2
- Additional Feature :
- High Reliability
- Type :
- Switching Diode
- Reverse Recovery Time-Max :
- 0.4 μs
- RoHS Status :
- Yes with exemptions
- Surface Mount :
- No
- Terminal Form :
- Wire
- Standard Package Name :
- Case E
- Reach Compliance Code :
- Compliant
- JESD-30 Code :
- O-LALF-W2
- Maximum Continuous Forward Current (A) :
- 3@Ta=55C
- Manufacturer :
- Microsemi Corporation
- Supplier Temperature Grade :
- COMMERCIAL
- Output Current-Max :
- 3 A
- Diode Element Material :
- SILICON
- Peak Reverse Current (uA) :
- 1
- Number of Phases :
- 1
- Rep Pk Reverse Voltage-Max :
- 600 V
- HTS Code :
- 8541.10.00.80
- Lead Shape :
- Through Hole
- Mounting :
- Through Hole
- Diameter :
- 3.42(Max)
- Package Shape :
- Round
- Terminal Position :
- Axial
- Minimum Operating Temperature (°C) :
- -65
- Package Length :
- 4.7(Max)
- Non-rep Pk Forward Current-Max :
- 80 A
- Number of Terminals :
- 2
- ECCN (US) :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Peak Forward Voltage (V) :
- 1.5@9A
- Packaging :
- Bag
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Configuration :
- Single
- Application :
- FAST RECOVERY
- Reverse Current-Max :
- 1 µA
- Peak Reverse Repetitive Voltage (V) :
- 600
- Terminal Finish :
- Matte Tin (Sn)
- Peak Non-Repetitive Surge Current (A) :
- 80
- Number of Elements :
- 1
- Datasheets
- 1N5420E3

RECTIFIER DIODE SILICON NOT SPECIFIED AXIAL Bag
1N5420E3 Overview
In accordance with the datasheets, the forward peak voltage is
1N5420E3 Features
the forward peak voltage is 1.5@9A
a maximum output current voltage of 3 A
1N5420E3 Applications
There are a lot of Microsemi
1N5420E3 applications of RF diodes.
- Clamping circuits
- Diode ring mixer
- RF detector
- RF voltage doubler
- Wearables
- Smart metering
- Set top boxes
- RF attenuators and switches
- Low-loss, high-power limiters
- Receiver protectors
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