1N5407

Manufacturer :

NTE Electronics, Inc.

Product Category :

Diodes - Rectifiers - Single

Radiation Hardening :

No

Number of Pins :

2

Element Configuration :

Single

Current - Reverse Leakage @ Vr :

10μA @ 800V

Packaging :

Bulk

Operating Temperature - Junction :

-65°C~150°C

Height :

5.3mm

Weight :

1.09999g

Pin Count :

2

Peak Non-Repetitive Surge Current :

200A

Reverse Voltage (DC) :

800V

Average Rectified Current :

3A

Width :

5.3mm

Diode Type :

Standard

Terminal Finish :

Matte Tin (Sn)

Capacitance @ Vr, F :

25pF @ 4V 1MHz

Case Connection :

Isolated

Output Current-Max :

3A

HTS Code :

8541.10.00.80

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

40

Max Reverse Voltage (DC) :

800V

Speed :

Standard Recovery >500ns, > 200mA (Io)

Terminal Form :

Wire

Max Surge Current :

200A

Length :

9.5mm

Peak Reflow Temperature (Cel) :

260

Peak Reverse Current :

10μA

Pbfree Code :

No

Diode Element Material :

SILICON

Base Part Number :

1N5407

Number of Elements :

1

Package / Case :

DO-201AD, Axial

Number of Terminations :

2

Mounting Type :

Through Hole

Factory Lead Time :

10 Weeks

Voltage - Forward (Vf) (Max) @ If :

1V @ 3A

Application :

GENERAL PURPOSE

RoHS Status :

ROHS3 Compliant

Published :

2006

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-65°C

Forward Voltage :

1V

Forward Current :

3A

JESD-609 Code :

e3

Number of Phases :

1

Max Repetitive Reverse Voltage (Vrrm) :

800V