1HP04CH-TL-W
- Mfr.Part #
- 1HP04CH-TL-W
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 170MA 3CPH
- Stock
- 91,754
- In Stock :
- 91,754
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 200 ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 18ns
- JESD-30 Code :
- R-PDSO-G3
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 0.9nC @ 10V
- Factory Lead Time :
- 10 Weeks
- Drain to Source Breakdown Voltage :
- -100V
- Published :
- 2011
- Max Power Dissipation :
- 600mW
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 100V
- Turn On Delay Time :
- 21 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Rds On (Max) @ Id, Vgs :
- 18 Ω @ 80mA, 10V
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Fall Time (Typ) :
- 81 ns
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 14pF @ 20V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- Continuous Drain Current (ID) :
- 170mA
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.6V @ 100μA
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Datasheets
- 1HP04CH-TL-W

P-Channel Tape & Reel (TR) 18 Ω @ 80mA, 10V ±20V 14pF @ 20V 0.9nC @ 10V 100V TO-236-3, SC-59, SOT-23-3
1HP04CH-TL-W Overview
A device's maximum input capacitance is 14pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 170mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-100V, and this device has a drain-to-source breakdown voltage of -100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 200 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 21 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (4V 10V) to reduce its overall power consumption.
1HP04CH-TL-W Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 200 ns
a 100V drain to source voltage (Vdss)
1HP04CH-TL-W Applications
There are a lot of ON Semiconductor
1HP04CH-TL-W applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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