ZXTEM322TA
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- Mfr.Part #
- ZXTEM322TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-PowerSMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 3.5A 3MLP/DFN
- Stock
- 19,076
- In Stock ：
- 19,076
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- ZXTEM322
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Height :
- 1mm
- Width :
- 2mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 3W
- Pin Count :
- 5
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 160MHz
- Current - Collector Cutoff (Max) :
- 25nA
- Max Power Dissipation :
- 3W
- Package / Case :
- 3-PowerSMD, Flat Leads
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7.5V
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 300mA, 3.5A
- Max Collector Current :
- 3.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Length :
- 2mm
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Published :
- 2006
- JESD-30 Code :
- S-PDSO-F3
- Element Configuration :
- Single
- Qualification Status :
- Not Qualified
- Frequency :
- 160MHz
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Pins :
- 322
- Gain Bandwidth Product :
- 160MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 3.5A
- Number of Terminations :
- 3
- Datasheets
- ZXTEM322TA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-PowerSMD, Flat Leads Tape & Reel (TR) Surface Mount
ZXTEM322TA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 300mA, 3.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3.5A volts is possible.
ZXTEM322TA Features
the DC current gain for this device is 300 @ 200mA 2V
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 3.5A
a transition frequency of 160MHz
ZXTEM322TA Applications
There are a lot of Diodes Incorporated
ZXTEM322TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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