ZXT953KTC
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- Mfr.Part #
- ZXT953KTC
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A TO252-3
- Stock
- 4,096
- In Stock ：
- 4,096
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Number of Elements :
- 1
- Pbfree Code :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 2.39mm
- Current Rating :
- -5A
- RoHS Status :
- ROHS3 Compliant
- Width :
- 6.22mm
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXT953
- Max Collector Current :
- 5A
- Weight :
- 260.39037mg
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 4.2W
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 390mV @ 500mA, 5A
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Transition Frequency :
- 125MHz
- Factory Lead Time :
- 15 Weeks
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 390mV
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- -335mV
- Length :
- 6.73mm
- Terminal Finish :
- Matte Tin (Sn)
- Max Breakdown Voltage :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Power - Max :
- 4.2W
- Voltage - Rated DC :
- -100V
- Gain Bandwidth Product :
- 125MHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 140V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Datasheets
- ZXT953KTC
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
ZXT953KTC Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1A 1V.With a collector emitter saturation voltage of -335mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 390mV @ 500mA, 5A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.A transition frequency of 125MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 5A volts at its maximum.
ZXT953KTC Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -335mV
the vce saturation(Max) is 390mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 125MHz
ZXT953KTC Applications
There are a lot of Diodes Incorporated
ZXT953KTC applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| ZXT951KQTC | Diodes Incorporated | 2,500 | TRANS PNP 60V 6A TO252 |
| ZXT951KTC | Diodes Incorporated | 9 | TRANS PNP 60V 6A TO252-3 |
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