ZX5T955GTA
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- Mfr.Part #
- ZX5T955GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 140V 4A SOT223-3
- Stock
- 721
- In Stock ：
- 721
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Voltage - Rated DC :
- -140V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.7mm
- Width :
- 3.7mm
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -7V
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- 180V
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 3W
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 4
- Pin Count :
- 4
- Pbfree Code :
- No
- Max Breakdown Voltage :
- 140V
- Published :
- 2006
- Gain Bandwidth Product :
- 120MHz
- Max Collector Current :
- 4A
- Max Power Dissipation :
- 3W
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- ZX5T955
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 140V
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -360mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -4A
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Transition Frequency :
- 120MHz
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- -4A
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 140V
- Terminal Finish :
- Matte Tin (Sn)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 300mA, 3A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- ZX5T955GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T955GTA Overview
DC current gain in this device equals 100 @ 1A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -360mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 360mV @ 300mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at -4A to achieve high efficiency.An emitter's base voltage can be kept at -7V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -4A current rating.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 140V volts.In extreme cases, the collector current can be as low as 4A volts.
ZX5T955GTA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 360mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 120MHz
ZX5T955GTA Applications
There are a lot of Diodes Incorporated
ZX5T955GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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