ZX5T949GTA
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- Mfr.Part #
- ZX5T949GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 5,780
- In Stock ：
- 5,780
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 110MHz
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 3.7mm
- Base Part Number :
- ZX5T949
- Max Power Dissipation :
- 3W
- Collector Emitter Saturation Voltage :
- 210mV
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 500mA, 5.5A
- Current Rating :
- -5.5A
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -5.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Frequency :
- 110MHz
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 3W
- Pin Count :
- 4
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 7V
- Max Breakdown Voltage :
- 30V
- Height :
- 1.65mm
- Mount :
- Surface Mount
- Published :
- 2003
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 15 Weeks
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.7mm
- Voltage - Rated DC :
- -30V
- Number of Pins :
- 4
- Transition Frequency :
- 110MHz
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Max Collector Current :
- 5.5A
- Case Connection :
- COLLECTOR
- Datasheets
- ZX5T949GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T949GTA Overview
This device has a DC current gain of 100 @ 1A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 210mV @ 500mA, 5.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -5.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of -5.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 5.5A volts is possible.
ZX5T949GTA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 210mV @ 500mA, 5.5A
the emitter base voltage is kept at 7V
the current rating of this device is -5.5A
a transition frequency of 110MHz
ZX5T949GTA Applications
There are a lot of Diodes Incorporated
ZX5T949GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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