ZTX755

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Mfr.Part #
ZTX755
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS PNP 150V 1A E-LINE
Stock
16,034
In Stock :
16,034

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
150V
Width :
2.41mm
Weight :
453.59237mg
Max Power Dissipation :
1W
Transition Frequency :
30MHz
Base Part Number :
ZTX755
Current - Collector Cutoff (Max) :
100nA ICBO
Voltage - Rated DC :
-150V
Current - Collector (Ic) (Max) :
1A
Current Rating :
-1A
ECCN Code :
EAR99
Package / Case :
E-Line-3
Pin Count :
3
Terminal Form :
Wire
Emitter Base Voltage (VEBO) :
-5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Operating Temperature :
-55°C~200°C TJ
Max Collector Current :
1A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Number of Elements :
1
Qualification Status :
Not Qualified
Element Configuration :
Single
Length :
4.77mm
Collector Base Voltage (VCBO) :
-150V
Mounting Type :
Through Hole
Published :
1997
Height :
4.01mm
Transistor Element Material :
SILICON
Gain Bandwidth Product :
30MHz
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
500mV
Number of Terminations :
3
RoHS Status :
RoHS Compliant
JESD-30 Code :
R-PSIP-W3
Continuous Collector Current :
-1A
Mount :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 500mA 5V
Transistor Type :
PNP
HTS Code :
8541.29.00.95
Datasheets
ZTX755
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX755 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:ZTX755, Package / Case:E-Line-3, Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Number of Terminations:3, ZTX755 pinout, ZTX755 datasheet PDF, ZTX755 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZTX755 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZTX755


PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole

ZTX755 Overview


In this device, the DC current gain is 50 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 1A.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).30MHz is present in the transition frequency.Maximum collector currents can be below 1A volts.

ZTX755 Features


the DC current gain for this device is 50 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 30MHz


ZTX755 Applications


There are a lot of Diodes Incorporated
ZTX755 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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