ZTX753STZ
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- Mfr.Part #
- ZTX753STZ
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3, Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A E-LINE
- Stock
- 95,886
- In Stock ：
- 95,886
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Height :
- 4.01mm
- Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Box (TB)
- Base Part Number :
- ZTX753
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 1W
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- -2A
- Voltage - Rated DC :
- -100V
- Pin Count :
- 3
- Gain Bandwidth Product :
- 140MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Wire
- DC Current Gain-Min (hFE) :
- 25
- Length :
- 4.77mm
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 453.59237mg
- Width :
- 2.41mm
- Collector Base Voltage (VCBO) :
- 120V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Frequency :
- 140MHz
- Published :
- 1997
- Collector Emitter Saturation Voltage :
- -300mV
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Type :
- PNP
- Package / Case :
- E-Line-3, Formed Leads
- Operating Temperature :
- -55°C~200°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Reference Standard :
- CECC
- Continuous Collector Current :
- -2A
- Max Breakdown Voltage :
- 100V
- Mount :
- Through Hole
- Transition Frequency :
- 100MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Datasheets
- ZTX753STZ
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PNP -55°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3, Formed Leads Tape & Box (TB) Through Hole
ZTX753STZ Overview
As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -2A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 2A volts.
ZTX753STZ Features
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz
ZTX753STZ Applications
There are a lot of Diodes Incorporated
ZTX753STZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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