ZTX749
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- Mfr.Part #
- ZTX749
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 2A E-LINE
- Stock
- 27,925
- In Stock ：
- 27,925
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Width :
- 2.41mm
- Factory Lead Time :
- 15 Weeks
- Max Power Dissipation :
- 1W
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Frequency :
- 160MHz
- ECCN Code :
- EAR99
- Current Rating :
- -2A
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- Terminal Form :
- Wire
- Lead Free :
- Lead Free
- Transition Frequency :
- 160MHz
- Continuous Collector Current :
- -2A
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~200°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -230mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 4.77mm
- Published :
- 2003
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Collector Emitter Breakdown Voltage :
- 25V
- Manufacturer Package Identifier :
- E-Line
- Height :
- 4.01mm
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 35V
- Voltage - Rated DC :
- -25V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 160MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 2V
- Weight :
- 453.59237mg
- Package / Case :
- E-Line-3
- Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Base Part Number :
- ZTX749
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- ZTX749
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PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Bulk Through Hole
ZTX749 Overview
In this device, the DC current gain is 100 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -230mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A -2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 160MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
ZTX749 Features
the DC current gain for this device is 100 @ 1A 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 160MHz
ZTX749 Applications
There are a lot of Diodes Incorporated
ZTX749 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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