W987D6HBGX7E

Manufacturer :

Winbond Electronics Corporation

Product Category :

Memory

Sequential Burst Length :

1248FP

Interleaved Burst Length :

1248

Published :

2011

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1.025mm

Memory Format :

DRAM

Terminal Pitch :

0.8mm

Number of Functions :

1

Memory Size :

128Mb 8M x 16

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

1.7V~1.95V

Standby Current-Max :

0.00001A

JESD-609 Code :

e1

Refresh Cycles :

4096

Write Cycle Time - Word, Page :

15ns

Organization :

8MX16

Operating Temperature :

-25°C~85°C TC

Memory Width :

16

Mounting Type :

Surface Mount

Operating Supply Voltage :

1.8V

Access Time :

5.4ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Interface :

Parallel

Packaging :

Tray

Supply Voltage-Max (Vsup) :

1.95V

Nominal Supply Current :

70mA

Number of Pins :

54

Mount :

Surface Mount

Output Characteristics :

3-STATE

Package / Case :

54-TFBGA

Additional Feature :

AUTO/SELF REFRESH

Address Bus Width :

14b

Clock Frequency :

133MHz

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Length :

9mm

Number of Terminations :

54

Supply Voltage :

1.8V

Number of Ports :

1

Radiation Hardening :

No

Terminal Position :

BOTTOM

Density :

128 Mb