US1AE-TP

Manufacturer :

Micro Commercial Components (MCC)

Product Category :

Diodes - Rectifiers - Single

Configuration :

Single

Mounting :

Surface Mount

Peak Reverse Recovery Time (ns) :

50

Reach Compliance Code :

not_compliant

PCB changed :

2

Type :

Switching Diode

Pin Count :

2

Series :

-

Operating Temperature - Junction :

-50°C ~ 150°C

ECCN (US) :

EAR99

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Maximum DC Reverse Voltage (V) :

50

Voltage - Forward (Vf) (Max) @ If :

1 V @ 1 A

Package Length :

4.57(Max)

Peak Reverse Repetitive Voltage (V) :

50

Terminal Form :

C BEND

Current - Reverse Leakage @ Vr :

10 µA @ 50 V

JESD-30 Code :

R-PDSO-C2

Package :

Tape and Reel (TR)

Maximum Operating Temperature (°C) :

150

Minimum Operating Temperature (°C) :

-50

Voltage - DC Reverse (Vr) (Max) :

50 V

Current - Average Rectified (Io) :

1A

Base Product Number :

US1A

Package Width :

2.92(Max)

Maximum Continuous Forward Current (A) :

1

Reverse Recovery Time-Max :

0.05 μs

Product Status :

Discontinued at Digi-Key

Number of Elements :

1

Qualification Status :

Not Qualified

Output Current-Max :

1 A

Surface Mount :

yes

Standard Package Name :

DO-214

Pbfree Code :

yes

HTS Code :

8541.10.00.80

HTS :

8541.10.00.80

Diode Type :

Standard

Supplier Device Package :

SMAE

Manufacturer :

Micro Commercial Components

Military :

No

Peak Reflow Temperature (Cel) :

260

Supplier Package :

SMAE

Number of Terminals :

2

Package Height :

2.44(Max)

Reverse Recovery Time (trr) :

50 ns

Diode Element Material :

SILICON

Terminal Position :

Dual

Mounting Type :

Surface Mount

Peak Non-Repetitive Surge Current (A) :

30

Package / Case :

DO-214AC, SMA

Peak Forward Voltage (V) :

1

Rep Pk Reverse Voltage-Max :

50 V

JESD-609 Code :

e3

Package Shape :

RECTANGULAR

Lead Shape :

J-Lead

Packaging :

Tape and Reel

RoHS Status :

Yes with exemptions

Capacitance @ Vr, F :

20pF @ 4V, 1MHz

Peak Reverse Current (uA) :

10

Speed :

Fast Recovery =< 500ns, > 200mA (Io)