UM6010E

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Mfr.Part #
UM6010E
Manufacturer
Microchip Technology
Package / Case
Axial
Datasheet
Download
Description
SI PPIN HERMETIC GLASS AXIAL
Stock
36,711
In Stock :
36,711

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Manufacturer :
Microchip Technology
Product Category :
Diodes - RF
Terminal Position :
Axial
Capacitance @ Vr, F :
-
Configuration :
Single
Package Shape :
Round
Qualification Status :
Not Qualified
Product Status :
Active
Terminal Form :
Flat
Manufacturer :
Panjit
Operating Temperature :
-
Packaging :
Bulk
Series :
-
Product Type :
Zener Diodes
Subcategory :
Diodes and Rectifiers
Package :
Tray
Diode Capacitance-Nom :
0.5 pF
Power Dissipation-Max :
2.5 W
Package / Case :
Axial
Number of Terminals :
2
Resistance @ If, F :
-
JESD-30 Code :
O-XAMW-F2
Application :
ATTENUATOR; SWITCHING
Diode Type :
-
Frequency Band :
ULTRA HIGH FREQUENCY
Diode Capacitance-Max :
0.5 pF
Brand :
Panjit
Diode Res Test Frequency :
100 MHz
Surface Mount :
yes
Reach Compliance Code :
Unknown
Diode Element Material :
SILICON
Reverse Test Voltage :
100 V
Product Category :
Zener Diodes
Minority Carrier Lifetime-Nom :
1 μs
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Diode Res Test Current :
100 mA
RoHS :
Details
Technology :
POSITIVE-INTRINSIC-NEGATIVE
Supplier Device Package :
Axial
HTS Code :
8541.10.00.80
Diode Forward Resistance-Max :
1.7 Ω
Voltage - Peak Reverse (Max) :
-
Breakdown Voltage-Min :
1000 V
Number of Elements :
1
Datasheets
UM6010E
Introducing Diodes - RF Microchip Technology UM6010E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-, Package / Case:Axial, UM6010E pinout, UM6010E datasheet PDF, UM6010E amp .Beyond Diodes - RF Microchip Technology UM6010E ,we also offer SMP1330-005LF, SMS3923-081LF, MA4P7438-287T, Our vast inventory has you covered. Contact us now for immediate solutions.



- - - SILICON NOT SPECIFIED AXIAL Bulk Axial

UM6010E Overview


Device specifications specify a maximum reverse voltage of - for this device.RF diode is possible that this device may occasionally operate at RF diodes lowest breakdown voltage of 1000 V.RF diode is necessary to have a reverse test voltage wRF diodehin 100 V in order to obtain a valid conversion result.

UM6010E Features


at its lowest breakdown voltage of 1000 V


UM6010E Applications


There are a lot of Microchip
UM6010E applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters
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