UC3710TG3
- Mfr.Part #
- UC3710TG3
- Manufacturer
- Texas Instruments
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE TO220-5
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Texas Instruments
- Product Category :
- Gate Drivers
- Packaging :
- Tube
- Turn On Delay Time :
- 30 ns
- Output Characteristics :
- TOTEM-POLE
- Current - Peak Output (Source, Sink) :
- 6A 6A
- Gate Type :
- IGBT, N-Channel MOSFET
- Fall Time (Typ) :
- 80 ns
- Output Peak Current Limit-Nom :
- 1A
- Input Type :
- Inverting, Non-Inverting
- Channel Type :
- Single
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Power Dissipation :
- 3W
- Turn On Time :
- 0.07 µs
- Max Supply Current :
- 35mA
- Thickness :
- 4.58mm
- Rise / Fall Time (Typ) :
- 85ns 85ns
- Max Output Current :
- 6A
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Output Polarity :
- TRUE AND INVERTED
- Output Current :
- 6A
- Number of Functions :
- 1
- Length :
- 10.16mm
- Weight :
- 1.930007g
- Number of Terminations :
- 5
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-5
- Max Power Dissipation :
- 3W
- Radiation Hardening :
- No
- Width :
- 8.51mm
- ECCN Code :
- EAR99
- Supply Voltage :
- 15V
- Mount :
- Through Hole
- Number of Outputs :
- 1
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 4.7V~18V
- Base Part Number :
- UC3710
- Driven Configuration :
- Low-Side
- Input Characteristics :
- Standard
- Turn Off Time :
- 0.08 µs
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Rise Time :
- 70ns
- Mounting Type :
- Through Hole
- High Side Driver :
- No
- JESD-609 Code :
- e3
- Height :
- 4.7mm
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Logic Voltage - VIL, VIH :
- 0.8V 2V
- Propagation Delay :
- 30 ns
- Number of Pins :
- 5
- Terminal Finish :
- Matte Tin (Sn)
- Nominal Supply Current :
- 35mA
- Datasheets
- UC3710TG3
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Gate Drivers Texas Instruments UC3710TG3 Overview
The Texas Instruments UC3710TG3 is a robust gate driver designed specifically to enhance the performance and reliability of low-side gate drive applications. This high-quality component from Texas Instruments ensures efficient operation with its ability to drive large MOSFETs and IGBTs effectively. The UC3710TG3 is encapsulated in a TO220-5 package, offering superior thermal and electrical characteristics that are critical for sustained high-power operations. The inclusion of this gate driver in your designs can lead to improved efficiency, reduced switching losses, and enhanced overall system robustness, making it a prime choice for developers looking to optimize their power management solutions. Utilizing the Gate Drivers Texas Instruments UC3710TG3 can significantly elevate the performance and reliability of your electronic designs.
UC3710TG3 Features
The UC3710TG3 gate driver features include robust output stages that can deliver high peak currents, integrated under-voltage lockout protection to ensure stable operation under fluctuating supply conditions, and fast propagation times to minimize delay. Additionally, its design is tailored to reduce electromagnetic interference (EMI), a common challenge in high-speed switching environments. These features make the UC3710TG3 an indispensable component in any power management system.
UC3710TG3 Applications
- Motor Control Systems: In these systems, the UC3710TG3 drives high-power MOSFETs and IGBTs, providing rapid switching of motor drives which is essential for achieving high efficiency and precision in motor speed and torque control.
- Power Supplies: This gate driver ensures stable and efficient operation of switch-mode power supplies by improving the reliability and performance of the low-side switching components.
- DC-DC Converters: The UC3710TG3 is crucial for managing the gate driving in DC-DC converters, facilitating enhanced power density and efficiency through effective switching.
- Renewable Energy Systems: In solar inverters and wind turbine converters, the UC3710TG3 plays a vital role by driving the gates of MOSFETs and IGBTs to ensure efficient power conversion and management.
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