TN3019A
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- Mfr.Part #
- TN3019A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO226-3
- Stock
- 6,341
- In Stock ：
- 6,341
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Power - Max :
- 1W
- Qualification Status :
- COMMERCIAL
- Transition Frequency :
- 100MHz
- Current - Collector (Ic) (Max) :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- 100MHz
- JESD-30 Code :
- O-PBCY-T3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- JEDEC-95 Code :
- TO-226AE
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Configuration :
- Single
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Datasheets
- TN3019A
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
TN3019A Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
TN3019A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
TN3019A Applications
There are a lot of Rochester Electronics, LLC
TN3019A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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