TLP293(GB-TPL,E
- Mfr.Part #
- TLP293(GB-TPL,E
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 4-SOIC (0.179, 4.55mm Width)
- Datasheet
- Download
- Description
- OPTOISOLATOR 3.75KV TRANS 4-SO
- Stock
- 12,137
- In Stock :
- 12,137
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Optoisolators - Transistor, Photovoltaic Output
- Turn On Delay Time :
- 3 μs
- Voltage - Forward (Vf) (Typ) :
- 1.25V
- Collector Emitter Breakdown Voltage :
- 80V
- Current Transfer Ratio (Max) :
- 600% @ 5mA
- Collector Emitter Saturation Voltage :
- 300mV
- Max Input Current :
- 50mA
- Max Output Voltage :
- 80V
- Reverse Voltage :
- 5V
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 12 Weeks
- Number of Elements :
- 1
- Configuration :
- Single
- Turn-Off Delay Time :
- 3 μs
- Package / Case :
- 4-SOIC (0.179, 4.55mm Width)
- Collector Emitter Voltage (VCEO) :
- 80V
- Input Type :
- DC
- Ambient Temperature Range High :
- 125°C
- Number of Channels :
- 1
- RoHS Status :
- RoHS Compliant
- Voltage - Isolation :
- 3750Vrms
- Mount :
- Surface Mount
- Output Current per Channel :
- 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) :
- 300mV
- Dark Current-Max :
- 80nA
- Max Power Dissipation :
- 200mW
- Radiation Hardening :
- No
- Height :
- 2.3mm
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~125°C
- Number of Pins :
- 4
- Turn On / Turn Off Time (Typ) :
- 3μs, 3μs
- Max Collector Current :
- 50mA
- Rise / Fall Time (Typ) :
- 2μs 3μs
- Current Transfer Ratio (Min) :
- 100% @ 5mA
- Published :
- 2014
- Output Type :
- Transistor
- Forward Current :
- 10mA
- Max Junction Temperature (Tj) :
- 125°C
- Mounting Type :
- Surface Mount
- Additional Feature :
- UL RECOGNIZED
- Pbfree Code :
- yes
- Datasheets
- TLP293(GB-TPL,E
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TLP293(GB-TPL,E datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available at
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