TIP50G
- Mfr.Part #
- TIP50G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO220
- Stock
- 146
- In Stock :
- 146
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 1A
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 10MHz
- Weight :
- 907.18474mg
- Transistor Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Power - Max :
- 2W
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Collector Emitter Saturation Voltage :
- 1V
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Base Part Number :
- TIP50
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 500V
- Published :
- 1993
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Length :
- 10.28mm
- Voltage - Rated DC :
- 400V
- Transition Frequency :
- 10MHz
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Terminal Finish :
- Tin (Sn)
- Height :
- 9.28mm
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.82mm
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Emitter Breakdown Voltage :
- 400V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Pin Count :
- 3
- Number of Terminations :
- 3
- Frequency :
- 10MHz
- Collector Emitter Voltage (VCEO) :
- 400V
- Surface Mount :
- No
- hFE Min :
- 30
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Datasheets
- TIP50G

NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP50G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
TIP50G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
TIP50G Applications
There are a lot of ON Semiconductor
TIP50G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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