TIP50G
- Mfr.Part #
- TIP50G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 1A TO220
- Stock
- 146
- In Stock :
- 146
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 9.28mm
- Lead Free :
- Lead Free
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Current - Collector Cutoff (Max) :
- 1mA
- Power - Max :
- 2W
- Transistor Type :
- NPN
- Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Gain Bandwidth Product :
- 10MHz
- Transistor Element Material :
- SILICON
- Published :
- 1993
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 400V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Base Part Number :
- TIP50
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tube
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 1V
- Max Power Dissipation :
- 40W
- Factory Lead Time :
- 8 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Weight :
- 907.18474mg
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Current Rating :
- 1A
- Collector Emitter Voltage (VCEO) :
- 400V
- JESD-609 Code :
- e3
- Length :
- 10.28mm
- Collector Base Voltage (VCBO) :
- 500V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Transition Frequency :
- 10MHz
- hFE Min :
- 30
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Width :
- 4.82mm
- Frequency :
- 10MHz
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 400V
- Datasheets
- TIP50G

NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP50G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.
TIP50G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
TIP50G Applications
There are a lot of ON Semiconductor
TIP50G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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