TIP41B
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- Mfr.Part #
- TIP41B
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 6A TO220-3
- Stock
- 384
- In Stock ：
- 384
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Length :
- 10.28mm
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 3MHz
- Transistor Element Material :
- SILICON
- Height :
- 15.75mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 3A 4V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Published :
- 2005
- Voltage - Rated DC :
- 80V
- Gain Bandwidth Product :
- 3MHz
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 1.5V
- Packaging :
- Tube
- Base Part Number :
- TIP41
- Current - Collector Cutoff (Max) :
- 700µA
- Number of Terminations :
- 3
- hFE Min :
- 30
- Max Collector Current :
- 6A
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 600mA, 6A
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current Rating :
- 6A
- Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- TIP41B
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
TIP41BG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 600mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 6A volts.
TIP41BG Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz
TIP41BG Applications
There are a lot of ON Semiconductor
TIP41BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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