STSA851-AP
- Mfr.Part #
- STSA851-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO92AP
- Stock
- 5,992
- In Stock :
- 5,992
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Power Dissipation :
- 1.1W
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 200mA, 5A
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Base Part Number :
- STSA851
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Continuous Collector Current :
- 5A
- Gain Bandwidth Product :
- 130MHz
- Frequency :
- 130MHz
- Number of Elements :
- 1
- hFE Min :
- 150
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 150V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.1W
- Max Collector Current :
- 5A
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Mounting Type :
- Through Hole
- Datasheets
- STSA851-AP

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STSA851-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 1V.The collector emitter saturation voltage is 60V, which allows for maximum design flexibility.When VCE saturation is 450mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 5A volts can be achieved.
STSA851-AP Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 60V
the vce saturation(Max) is 450mV @ 200mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
STSA851-AP Applications
There are a lot of STMicroelectronics
STSA851-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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