STSA851-AP
- Mfr.Part #
- STSA851-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO92AP
- Stock
- 5,992
- In Stock :
- 5,992
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transition Frequency :
- 130MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Frequency :
- 130MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Max Collector Current :
- 5A
- Packaging :
- Tape and Box (TB)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 150V
- Max Power Dissipation :
- 1.1W
- Collector Emitter Breakdown Voltage :
- 60V
- Base Part Number :
- STSA851
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 130MHz
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 200mA, 5A
- Continuous Collector Current :
- 5A
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Power Dissipation :
- 1.1W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 7V
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 60V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- hFE Min :
- 150
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- STSA851-AP

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STSA851-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 1V.The collector emitter saturation voltage is 60V, which allows for maximum design flexibility.When VCE saturation is 450mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 5A volts can be achieved.
STSA851-AP Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 60V
the vce saturation(Max) is 450mV @ 200mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
STSA851-AP Applications
There are a lot of STMicroelectronics
STSA851-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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