STSA851-AP
- Mfr.Part #
- STSA851-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 5A TO92AP
- Stock
- 5,992
- In Stock :
- 5,992
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 5A
- Mount :
- Through Hole
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 7V
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 200mA, 5A
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 150V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 130MHz
- Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Emitter Saturation Voltage :
- 60V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Pins :
- 3
- Element Configuration :
- Single
- hFE Min :
- 150
- Collector Emitter Breakdown Voltage :
- 60V
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Base Part Number :
- STSA851
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 130MHz
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1.1W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 1V
- Terminal Position :
- BOTTOM
- Continuous Collector Current :
- 5A
- Power Dissipation :
- 1.1W
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- STSA851-AP

NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STSA851-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 1V.The collector emitter saturation voltage is 60V, which allows for maximum design flexibility.When VCE saturation is 450mV @ 200mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 5A for high efficiency.Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 5A volts can be achieved.
STSA851-AP Features
the DC current gain for this device is 150 @ 2A 1V
a collector emitter saturation voltage of 60V
the vce saturation(Max) is 450mV @ 200mA, 5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
STSA851-AP Applications
There are a lot of STMicroelectronics
STSA851-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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