STH3

Manufacturer :

Altech Corporation

Product Category :

Specialized

Gate to Source Voltage (Vgs) :

30V

Height :

5mm

Transistor Element Material :

SILICON

Turn-Off Delay Time :

45 ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Continuous Drain Current (ID) :

2.5A

Transistor Application :

SWITCHING

Element Configuration :

Single

Width :

15.8mm

Packaging :

Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds :

939pF @ 25V

Mounting Type :

Surface Mount

Fall Time (Typ) :

61 ns

Avalanche Energy Rating (Eas) :

450 mJ

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Voltage (Vdss) :

1500V

ECCN Code :

EAR99

Base Part Number :

STH3N

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Rise Time :

47ns

Vgs (Max) :

±30V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

29.3nC @ 10V

Rds On (Max) @ Id, Vgs :

9 Ω @ 1.3A, 10V

Length :

10.4mm

REACH SVHC :

No SVHC

Number of Elements :

1

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Number of Terminations :

2

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab) Variant

Threshold Voltage :

4V

Manufacturer Package Identifier :

H2PAK-2-8159712

Drain to Source Breakdown Voltage :

1.5kV

Terminal Form :

Gull wing

Factory Lead Time :

23 Weeks

FET Type :

N-Channel

Series :

PowerMESH™

Mount :

Surface Mount

Turn On Delay Time :

24 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

9Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Dissipation :

140W

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

140W Tc