SPB-18-P

Manufacturer :

Ruland Manufacturing

Product Category :

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 1mA

Published :

2006

Power Dissipation-Max :

81.1W Ta

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-18.6A

Peak Reflow Temperature (Cel) :

220

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

151 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

74.8A

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Mount :

Surface Mount

Lead Free :

Contains Lead

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

18.7A

Terminal Finish :

Tin/Lead (Sn/Pb)

Series :

SIPMOS®

HTS Code :

8541.29.00.95

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Voltage - Rated DC :

-60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Terminal Form :

Gull wing

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18.7A Ta

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Drain-source On Resistance-Max :

0.13Ohm

Rds On (Max) @ Id, Vgs :

130m Ω @ 13.2A, 10V

Number of Terminations :

2

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V