SBCW66GLT1G

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Mfr.Part #
SBCW66GLT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.8A SOT23-3
Stock
826
In Stock :
826

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Frequency - Transition :
100MHz
ECCN Code :
EAR99
Factory Lead Time :
4 Weeks
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Transition Frequency :
100MHz
Max Power Dissipation :
300mW
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
20nA
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
45V
Collector Base Voltage (VCBO) :
75V
Polarity/Channel Type :
NPN
Pbfree Code :
yes
Series :
Automotive, AEC-Q101
Transistor Type :
NPN
JESD-609 Code :
e3
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Max Collector Current :
800mA
Collector Emitter Voltage (VCEO) :
700mV
Number of Pins :
3
Published :
2011
Package / Case :
TO-236-3, SC-59, SOT-23-3
Pin Count :
3
Radiation Hardening :
No
Power - Max :
300mW
Base Part Number :
BCW66
Configuration :
Single
Surface Mount :
yes
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Datasheets
SBCW66GLT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBCW66GLT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Base Part Number:BCW66, SBCW66GLT1G pinout, SBCW66GLT1G datasheet PDF, SBCW66GLT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBCW66GLT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBCW66GLT1G


NPN -55°C~150°C TJ 20nA NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SBCW66GLT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.Collector current can be as low as 800mA volts at its maximum.

SBCW66GLT1G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz


SBCW66GLT1G Applications


There are a lot of ON Semiconductor
SBCW66GLT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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