SBCP56T3G

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Mfr.Part #
SBCP56T3G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 80V 1A SOT223
Stock
11,163
In Stock :
11,163

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Transistor Application :
AMPLIFIER
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Max Frequency :
35MHz
Case Connection :
COLLECTOR
Base Part Number :
BCP56
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Radiation Hardening :
No
Package / Case :
TO-261-4, TO-261AA
Current - Collector Cutoff (Max) :
100nA ICBO
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
4
Factory Lead Time :
8 Weeks
Max Collector Current :
1A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Terminal Form :
Gull wing
Polarity/Channel Type :
NPN
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Voltage (VCEO) :
80V
Surface Mount :
yes
Published :
2005
Transistor Type :
NPN
Collector Emitter Saturation Voltage :
500mV
Number of Pins :
4
Frequency - Transition :
130MHz
Length :
6.7mm
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
Terminal Finish :
Tin (Sn)
Collector Base Voltage (VCBO) :
100V
Series :
Automotive, AEC-Q101
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
1.5W
JESD-609 Code :
e3
Terminal Position :
Dual
Collector Emitter Breakdown Voltage :
80V
Transition Frequency :
130MHz
Emitter Base Voltage (VEBO) :
5V
Pin Count :
4
Height :
1.65mm
Pbfree Code :
yes
Width :
3.7mm
Element Configuration :
Single
Transistor Element Material :
SILICON
Datasheets
SBCP56T3G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBCP56T3G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BCP56, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, Operating Temperature:-65°C~150°C TJ, Number of Pins:4, SBCP56T3G pinout, SBCP56T3G datasheet PDF, SBCP56T3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBCP56T3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBCP56T3G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

SBCP56T3G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.

SBCP56T3G Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz


SBCP56T3G Applications


There are a lot of ON Semiconductor
SBCP56T3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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