SBCP56T3G
- Mfr.Part #
- SBCP56T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 11,163
- In Stock :
- 11,163
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Max Frequency :
- 35MHz
- Case Connection :
- COLLECTOR
- Base Part Number :
- BCP56
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- yes
- Published :
- 2005
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 4
- Frequency - Transition :
- 130MHz
- Length :
- 6.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 100V
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Transition Frequency :
- 130MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 4
- Height :
- 1.65mm
- Pbfree Code :
- yes
- Width :
- 3.7mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Datasheets
- SBCP56T3G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56T3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.
SBCP56T3G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T3G Applications
There are a lot of ON Semiconductor
SBCP56T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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