SBCP56T1G

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Mfr.Part #
SBCP56T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 80V 1A SOT223
Stock
2,008
In Stock :
2,008

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
130MHz
Factory Lead Time :
8 Weeks
Element Configuration :
Single
Radiation Hardening :
No
Terminal Form :
Gull wing
Pbfree Code :
yes
Transistor Type :
NPN
Package / Case :
TO-261-4, TO-261AA
Series :
Automotive, AEC-Q101
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 150mA 2V
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
1.5W
Case Connection :
COLLECTOR
Terminal Finish :
Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
Base Part Number :
BCP56
Transistor Application :
AMPLIFIER
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
yes
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
1A
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency :
130MHz
Terminal Position :
Dual
Published :
2005
Pin Count :
4
Operating Temperature :
-65°C~150°C TJ
Packaging :
Tape and Reel (TR)
Collector Base Voltage (VCBO) :
100V
Collector Emitter Breakdown Voltage :
80V
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Number of Pins :
4
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
Transition Frequency :
130MHz
Collector Emitter Voltage (VCEO) :
80V
Number of Terminations :
4
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Power Dissipation :
1.5W
Datasheets
SBCP56T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBCP56T1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Base Part Number:BCP56, Operating Temperature:-65°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Mounting Type:Surface Mount, SBCP56T1G pinout, SBCP56T1G datasheet PDF, SBCP56T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBCP56T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBCP56T1G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

SBCP56T1G Overview


In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

SBCP56T1G Features


the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz


SBCP56T1G Applications


There are a lot of ON Semiconductor
SBCP56T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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