SBCP56T1
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- Mfr.Part #
- SBCP56T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 100V
- Gain Bandwidth Product :
- 130MHz
- Number of Pins :
- 4
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 1.5W
- Max Collector Current :
- 1A
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 130MHz
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Power Dissipation :
- 1.5W
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCP56
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Transition Frequency :
- 130MHz
- Pin Count :
- 4
- Published :
- 2005
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 80V
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Datasheets
- SBCP56T1
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56T1G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
SBCP56T1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T1G Applications
There are a lot of ON Semiconductor
SBCP56T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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