SBCP56-16T3G
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- Mfr.Part #
- SBCP56-16T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 9,322
- In Stock ：
- 9,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Transition Frequency :
- 130MHz
- Base Part Number :
- BCP56
- Max Collector Current :
- 1A
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power - Max :
- 1.5W
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Pin Count :
- 4
- Max Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 80V
- Gain Bandwidth Product :
- 130MHz
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Datasheets
- SBCP56-16T3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56-16T3G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.130MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
SBCP56-16T3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56-16T3G Applications
There are a lot of ON Semiconductor
SBCP56-16T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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