SBC857BWT1G
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- Mfr.Part #
- SBC857BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC70-3
- Stock
- 6,015
- In Stock ：
- 6,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-70, SOT-323
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 150mW
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- PNP
- Max Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC85**W
- Current - Collector (Ic) (Max) :
- 100mA
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Lead Free :
- Lead Free
- Published :
- 2015
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Terminal Position :
- Dual
- Datasheets
- SBC857BWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC857BWT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
SBC857BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC857BWT1G Applications
There are a lot of ON Semiconductor
SBC857BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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